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2SA745A Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA745A
DESCRIPTION
·High Power Dissipation-
: PC= 70W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC1403A
APPLICATIONS
·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature
-3
A
70
W
150
℃
-65~150 ℃
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