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| 2SA740 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA740
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·DC Current Gain
: hFE= 40-140@ IC= -0.5A
·Complement to Type 2SC1448
APPLICATIONS
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IE
Emitter Current-Continuous
Total Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-150
V
-5
V
-1.5
A
1.5
A
1.5
W
25
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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