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| 2SA715 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA715
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -35V (Min)
·Complement to Type 2SC1162
APPLICATIONS
·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-35
V
VCEO Collector-Emitter Voltage
-35
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-2.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-3.0
A
0.75
W
10
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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