2SA700 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA700
DESCRIPTION
·High Collector Current -IC= -1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -35V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.5
A
8
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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