2SA679 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB679
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@T_C=25℃
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -120V(Min.)
·Complement to Type 2SC1079
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-120
V
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_E
Emitter Current-Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature
-120
V
-5
V
-12
A
12
A
100
W
150
℃
-65~150 ℃
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