 English |
|
|
|
|
|
|
|
| 2SA671 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,50V,25W) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA671
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ IC= -2.0A
·DC Current Gain
: hFE= 35-320@ IC= -0.5A
·Complement to Type 2SC1061
APPLICATIONS
·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IBB
Base Current-Continuous
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
25
W
150
â
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese