2SA652 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA652
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -100V(Min.)
·Contunuous Collector Current I_C= -1A
·Power DissipationP_C= 15W @T_C= 25℃
APPLICATIONS
·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-150
V
V_CEO
Collector-Emitter Voltage
-100
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current-Continuous
-1.0
A
P_C
Collector Power Dissipation@T_C=25℃
15
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
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