2SA636 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PNP/NPN SILICON EPITAXIAL TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA636 2SA636A
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1098/1098A
·High breakdown voltage
·High transition frequency
APPLICATIONS
·For audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
2SA636
2SA636A
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-peak
I_BB
Base current
P_T
Total power dissipation
T_C=25℃
T_a=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-70
-45
-60
-5
-3
-5
-0.6
10
1.2
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃