2SA635 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA635
DESCRIPTION
·With TO-202 package
·High current capability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
VALUE
-60
-60
-5
-1.0
10
150
-55~150
UNIT
V
V
V
A
W
℃
℃
isc website：www.iscsemi.com
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