 English |
|
|
|
|
|
|
|
| 2SA614 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA614
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -55V (Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V (Max.)@ IC= -1A
·Collector Power Dissipation-
: PC= 25W@ TC= 25â
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-55
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature Range
25
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese