2SA505 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA505
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V_(BR)CEO= -50V (Min.)
·Collector-Emitter Saturation Voltage-
V_CE(sat)= -0.8V (Max.)@ I_C= -500mA
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
-60
V
V_CEO Collector-Emitter Voltage
-50
V
V_EBO Emitter-Base Voltage
-5.0
V
I_C
Collector Current-Continuous
-1
A
I_E
Emitter Current-Continuous
1
A
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature Range
1
W
150
℃
-55~150 ℃
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