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| 2SA490 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON PNP TRIPLE DIFFUSED TYPE | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA490
DESCRIPTION
·High Collector Current:: IC= -3A
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -40V(Min)
·Complement to Type 2SC790
APPLICATIONS
·10 Watts output applications
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IE
Emitter Current-Continuous
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
3
A
25
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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