 English |
|
|
|
|
|
|
|
| 2SA483 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA483
DESCRIPTION
·High Collector Current:: IC= -1.5A
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·Complement to Type 2SC783
APPLICATIONS
·Power amplifier applications
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
IE
Emitter Current-Continuous
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
20
W
150
â
-65~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese