2SA2140 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA2140
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -180V(Min)
·Good Linearity of h_FE
APPLICATIONS
·Designed for power amplification and for TV VM circuit.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-180
V
V_CEO
Collector-Emitter Voltage
-180
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current-Continuous
-1.5
A
I_CP
Collector Current-Peak
Collector Power Dissipation
@T_a=25℃
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-3
A
2
W
20
150
℃
-55~150 ℃
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}