2SA2120 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Amplifier Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2120
DESCRIPTION
·Recommended for audio frequency amplifier output stage
·Complementary to 2SC5948
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-24
A
4.0
W
200
150
℃
Tstg
Storage Temperature
-55~150 ℃
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