2SA2063 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2063
DESCRIPTION
·Large current capacitance
·Wide ASO and high durability against breakdown
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·160V/12V,AF 90W output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-24
A
2.5
W
130
150
℃
Tstg
Storage Temperature
-55~150 ℃
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