2SA2004 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2004
DESCRIPTION
·Silicon PNP epitaxial planner type
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
Pc
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website： www.iscsemi.com
isc & iscsemi is registered trademark