2SA1952 Datasheet, PDF (1/2 Pages) Rohm – High-speed Switching Transistor (-60V, -5A)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1952
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.3(V)(Max)@IC= -3A
·High Switching Speed
·Complement to Type 2SC5103
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-5
A
10
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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