 English |
|
|
|
|
|
|
|
| 2SA1940 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1940
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -6A
·Good Linearity of hFE
·Complement to Type 2SC5197
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.8
A
80
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese