2SA1939 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1939
DESCRIPTION
With TO-3P(I) package
Complement to type 2SC5196
APPLICATIONS
Power amplifier applications
Recommend for 40W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_C
Collector power dissipation
T_C=25
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-80
-80
-5
-6
-0.6
60
150
-55~150
UNIT
V
V
V
A
A
W