2SA1932 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – complementary to 2sc5174

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1932
DESCRIPTION
·High collector breakdown voltage
·Complementary to 2SC5174
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-0.1
A
1.8
W
25
150
℃
-55~150 ℃
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