2SA1837 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1837
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -230V(Min)
·High Current-Gain Bandwidth Product
·Complement to Type 2SC4793
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-230
V
V_CEO Collector-Emitter Voltage
-230
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-1
A
I_B
Base Current-Continuous
Collector Power Dissipation
@T_a=25℃
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-0.1
A
2
W
20
150
℃
-55~150 ℃
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