2SA1771 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1771
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
MAX
-80
-80
-14
-12
-1.2
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃