 English |
|
|
|
|
|
|
|
| 2SA1757 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor | |||
| |||
|
INCHANGE Semiconductor
Silicon PNP Power Transistor
Product Specification
2SA1757
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
·High Switching Speed
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB=B -0.15A)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25â
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature
-5
V
-5
A
-10
A
2
W
25
150
â
-55~150 â
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese