2SA1742 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1742
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO= -60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-7.0
A
ICM
Collector Current-Pulse
-12
A
IB
Base Current-Continuous
-2.5
A
Total Power Dissipation @TC=25℃
25
PT
W
Total Power Dissipation @Ta=25℃
2.0
TJ
Junction Temperature
Tstg
Storage Temperature
150
℃
-55~150 ℃
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