2SA1700 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

isc Silicon PNP Power Transistor
DESCRIPTION
·High breakdown voltage
·Low Collector-Emitter Saturation Voltage
·High Power Dissipation-
: PC= 10W@TC=25℃,PC= 10W@Ta=25℃
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.2
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-0.4
A
10
W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
INCHANGE Semiconductor
2SA1700
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