2SA1659 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1659
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
V_CEO= -160V(Min)
·Complement to Type 2SC4370
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-160
V
V_CEO
Collector-Emitter Voltage
-160
V
V_EBO
Emitter-Base Voltage
-5.0
V
I_C(DC)
Collector Current(DC)
-1.5
A
I_B(DC)
P_C
T_J
Base Current
Collector Power Dissipation
@T_C=25℃
Junction Temperature
T_stg
Storage Temperature
-0.15
A
20
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn