2SA1657 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Complement to Type 2SC4368

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1657
DESCRIPTION
·Collector-Emitter Breakdown Voltage
V_CEO= -150V(Min)
·Complement to Type 2SC4368
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-150
V
V_CEO
Collector-Emitter Voltage
-150
V
V_EBO
Emitter-Base Voltage
-5.0
V
I_C
Collector Current-Continuous
-1.5
A
I_B
Base Current-Continuous
Collector Power Dissipation
@T_C= 25℃
P_C
Collector Power Dissipation
@T_a= 25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-0.5
A
20
W
2
150
℃
-55~150
℃
isc website：www.iscsemi.cn
1 _{isc & iscsemi is registered trademark}