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2SA1647 Datasheet, PDF (1/3 Pages) NEC – SILICON POWER TRANSISTOR | |||
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1647
DESCRIPTION
·Available for high-current control in small dimension
·Low collector saturation voltage:
VCE(sat)= -0.3V(Max)@ IC= -3A
·Fast switching speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·This transistor is ideal for use in Switching regulators,
DC/DC converters,motor drivers,Solenoid drivers
and other low-voltage power supply devices,as well
as for high-current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak NOTE1
Collector Power Dissipation
PC
@ TC=25â
Collector Power Dissipation
@Ta=25â NOTE2
TJ
Junction Temperature
-10
A
18
W
1.0
150
â
Tstg
Storage Temperature Range
-55~150
â
NOTE1:PWâ¤10ms,Duty cycle â¤50%
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