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| 2SA1646 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1646
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·Fast Switching Speed
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@IC= -6A
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a very low VCE(sat), is ideal for use
in switching power supplies,DC/DC converters,motor driv-
ers, solenoid drivers, and other low-voltage power supply
devices, as well as for high current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Pulse
-20
A
IBB
Base Current-Continuous
-6
A
Total Power Dissipation @TC=25â
40
PT
W
Total Power Dissipation @Ta=25â
1.5
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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