2SA1645-Z Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1645-Z
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A)
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Developed for use in switching power supplies, DC/DC
converters, motor drivers, solenoid drivers, and other
low-voltage power supply devices, as well as for high-
current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7.0
V
IC
Collector Current-Continuous
-7.0
A
ICM
Collector Current-Peak
-14
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3.5
A
1.5
W
35
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website： www.iscsemi.com
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