2SA1615-Z Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon Power Transistors

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1615-Z
DESCRIPTION
·Large current capacity:IC(DC)= -10A IC(pulse)=-15A
·High hFE and low saturation voltage:
hFE= 200min (VCE=-2V,IC=-0.5A)
VCE(sat)≤-0.25V (IC=-4A,IB=-0.05A)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·The 2SA1615 is available for the large current control
in small dimension due to the low saturation and is
ideal for high efficiency DC/AC converters due to
the fast switching speed
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-15
A
15
W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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