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2SA1606 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – High-Voltage Switching,AF 100W Driver Applications | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1606
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V (Min)
·Large Current Capacity
·Complement to Type 2SC4159
APPLICATIONS
·Designed for high-voltage switching, AF power amplifier,
100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-160
V
VEBO Emitter-Base Voltage
-6.0
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-3
A
15
W
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
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