 English |
|
|
|
|
|
|
|
| 2SA1535 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SA1535/A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) -2SA1535
= -180V(Min) -2SA1535A
·Good Linearity of hFE
·Complement to Type 2SC3944/A
APPLICATIONS
·Designed for low-frequency driver and high power amplifi-
cation, is optimum for the driver-stage of a 60W to 100 W
output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
2SA1535
-150
VCBO
Collector-Base
Voltage
V
2SA1535A
-180
2SA1535
-150
VCEO
Collector-Emitter
Voltage
V
2SA1535A
-180
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IC
Collector Current-Peak
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1.5
A
15
W
2
150
â
-55~150
â
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese