2SA1444 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1444
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -60V(Min)
·High DC Current Gain-
: h_FE= 100(Min)@ (V_CE= -2V , I_C= -3A)
·Low Saturation Voltage-
: V_CE(sat)= -0.3V(Max)@ (I_C= -8A, I_B= -0.4A)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high h_FE at low V_CE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-100
V
V_CEO
Collector-Emitter Voltage
-60
V
V_EBO
Emitter-Base Voltage
-7.0
V
I_C
Collector Current-Continuous
-15
A
I_CM
Collector Current-Pulse
-30
A
I_B
Base Current-Continuous
-7.5
A
Total Power Dissipation @T_C=25℃
30
P_T
W
Total Power Dissipation @T_a=25℃
2.0
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55~150 ℃
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