2SA1395 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
Product Specification
2SA1395
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= -0.6V(Max)@ I_C= -1A
·High Switching Speed
·Complement to Type 2SC3567
APPLICATIONS
·Designed for switching regulator, DC-DC converter and
high frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-100
V
V_CEO
Collector-Emitter Voltage
-100
V
V_EBO
Emitter-Base Voltage
-7
V
I_C
Collector Current-Continuous
-2
A
I_CM
Collector Current-Peak
-4
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature
-1
A
15
W
150
℃
-55~150 ℃
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