2SA1359 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1359
DESCRIPTION
·With TO-126 package
·Complement to type 2SC3422
·Good linearity of h_FE
APPLICATIONS
·Audio frequency amplifier
·Low speed switching
·Suitable for output stage of 5W car
radio and car stereo
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_a=25℃
T_C=25℃
·
VALUE
-40
-40
-5
-3
-1
1.5
10
150
-55～+150
UNIT
V
V
V
A
A
W
℃
℃