2SA1329 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1329
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3346
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-80
-80
-6
-12
-2
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃