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2SA1328 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1328
DESCRIPTION
·Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -6A
·High Switching Speed
·Complement to Type 2SC3345
APPLICATIONS
·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
IBB
Base Current-Continuous
Total Power Dissipation
PC
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-2
A
40
W
150
â
-55~150 â
isc Websiteï¼www.iscsemi.cn
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