2SA1306 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION
·Good Linearity of h_FE
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= -160V(Min)-2SA1306
= -180V(Min)-2SA1306A
= -200V(Min)-2SA1306B
·Complement to Type 2SC3298/A/B
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base
Voltage
2SA1306
-160
2SA1306A
-180
V
2SA1306B
-200
2SA1306
-160
V_CEO
Collector-Emitter
Voltage
2SA1306A
-180
V
2SA1306B
-200
V_EBO Emitter-Base Voltage
I_C
Collector Current-Continuous
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-5
V
-1.5
A
-0.15
A
20
W
150
℃
-55~150 ℃
isc Product Specification
2SA1306/A/B
isc Website：www.iscsemi.cn