2SA1304 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, VERTICAL OUTPUT APPLICATIONS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1304
DESCRIPTION
·
·With TO-220Fa package
·Complement to type 2SC3296
·High breakdown voltage
APPLICATIONS
·Power amplifier applications
·Vertical output applicatios
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_BB
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
T_a=25℃
VALUE
-150
-150
-5
-1.5
-0.5
20
2
150
-55~150
UNIT
V
V
A
A
W
℃
℃