2SA1303 Datasheet, PDF (1/2 Pages) Sanken electric – Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

INCHANGE Semiconductor
Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V_(BR)CEO= -150V(Min)
·Good Linearity of h_FE
·Complement to Type 2SC3284
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-150
V
V_CEO
Collector-Emitter Voltage
-150
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-14
A
I_BB
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-3
A
125
W
150
℃
-55~150
℃
Product Specification
2SA1303