2SA1283 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – SILICON PNP 2SA1283

isc Silicon PNP Transistor
INCHANGE Semiconductor
2SA1283
DESCRIPTION
·High Voltage and High Current
Vceo=-60V(Min.）
·Excellent hFE Linearity
·Low Noise
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency general purpose amplifier Applications
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE
UNIT
-60
V
-60
V
-6
V
-1
A
900
mW
150
℃
-55~150
℃
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