2SA1261 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – PNP EPITAXIAL SILICON TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1261
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SC3157
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220) and symbol
ABSOLUTE MAXIMUM RATINGS (T_C=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_CM
Collector current-Peak
I_BB
Base current
P_T
Total power dissipation
T_a=25℃
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-100
-100
-7
-10
-20
-3.5
1.5
60
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃