2SA1259 Datasheet, PDF (1/2 Pages) Sanyo Semicon Device – 60V/5A for High-Speed Drivers Applications

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2.5A
·Low Collector-Emitter Saturation Voltage
: VCE(sat) = -1.5V(Max)@ IC= -2.5A
·Complement to Type 2SC3145
isc Product Specification
2SA1259
APPLICATIONS
·Designed for general purpose amplifier high fT and high speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-70
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-5
ICM
Collector Current-Peak
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=125℃
Tj
Junction Temperature
-8
30
1.75
150
Tstg
Storage Temperature Range
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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