2SA1242 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1242
DESCRIPTION
·hFE=100-320(IC= -0.5A; VCE= -2V)
·hFE=70(Min)(IC= -4A; VCE= -2V)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A)
··High Power Dissipation-
: PC= 10W@TC=25℃,PC= 10W@Ta=25℃
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·For medium power amplifier and strobe flash applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-0.5
A
10
W
1.0
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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