2SA1225 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1225
DESCRIPTION
·High transition frequency
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complementary to 2SC2983
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-160
V
VCEO Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1.5
A
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
1
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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