2SA1220 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – PNP/NPN SILICON EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SA1220/A
DESCRIPTION
·Good Linearity of h_FE
·High Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -120V(Min)-2SA1220
= -160V(Min)-2SA1220A
·Complement to Type 2SC2690/A
APPLICATIONS
·Adudio frequency power amplifier
·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
2SA1220
-120
V_CBO Collector-Base Voltage
V
2SA1220A -160
2SA1220
-120
V_CEO Collector-Emitter Voltage
V
2SA1220A -160
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-1.2
A
I_CM
Collector Current-Peak
-2.5
A
I_BB
Base Current-Continuous
Collector Power Dissipation
@ T_a=25℃
P_C
Total Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.3
A
1.2
W
20
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn