2SA1217 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1217
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SC2877
·Good linearity of h_FE
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
·Suitable for output stage of 5 watts
car radio and car stereo
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
Open emitter
V_CEO
Collector-emitter voltage
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_BB
Base current
P_D
Total power dissipation
T_C=25℃
T_j
Junction temperature
T_stg
Storage temperature
VALUE
-40
-40
-5
-3
-1
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃