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2SA1214 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Wide Area of Safe Operation | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1214
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Desinged for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25â
PC
Total Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-2
A
1.5
W
25
150
â
-55~150 â
isc websiteï¼www.iscsemi.cn
isc & iscsemi is registered trademark
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